Intel TE28F128J3C150: A Comprehensive Technical Overview of the 128-Megabit Flash Memory Chip
The Intel TE28F128J3C150 stands as a significant component in the lineage of non-volatile memory solutions, representing a robust 128-megabit (16-megabyte) flash memory chip engineered for high-performance applications. Fabricated on advanced CMOS technology, this device merges high density with reliable data storage, making it a cornerstone for embedded systems, telecommunications infrastructure, and critical industrial electronics.
Architecture and Core Technology
At its heart, the TE28F128J3C150 is organized as 16,777,216 bits, configured as 128 sectors of 128K words each (where a word is 8 bits). This symmetrical sector architecture simplifies address management and is particularly advantageous for storing large, contiguous data blocks or complex code. It utilizes a NOR Flash memory cell design, which provides several critical benefits: true random access capabilities, allowing the microprocessor to execute code directly from the flash (execute-in-place, or XIP), and superior read performance compared to NAND alternatives.
A defining feature of this memory chip is its 150ns fast asynchronous page-mode read access time. This capability allows for rapid burst reads from within a selected "page" of memory, significantly boosting effective throughput for read-intensive operations and reducing system latency.
Voltage and Power Management
The device operates on a single 3.3V VCC supply voltage, aligning with the industry's shift towards lower power consumption. It also features a versatile VPP pin for expedited programming. When supplied with a high voltage (typically 12V), this pin enables a high-performance programming mode, drastically reducing the time required to write data to the array. This makes it suitable for systems that require frequent field updates.
Advanced Command Set and Reliability
The TE28F128J3C150 is controlled through a sophisticated JEDEC-standard command set. This interface allows the host system to perform complex operations—such as program, erase, suspend, and resume—with simple write cycles to the chip's internal command register. This abstraction layer shields the system from the intricate timing requirements of the underlying flash physics.
Reliability is paramount, and this Intel chip is built to last. It boasts a minimum endurance of 100,000 program/erase cycles per sector, ensuring data can be rewritten repeatedly over the product's lifetime. Furthermore, it guarantees 20 years of data retention under specified operating conditions, safeguarding critical information long-term.
Hardware Data Protection and Packaging
The chip incorporates robust hardware-level protection mechanisms. Features include voltage transition detection during write operations and a hardware-based write protection pin (`WP`). When asserted, this pin prevents any program or erase commands from modifying the memory content, offering a simple and effective barrier against accidental data corruption.
The TE28F128J3C150 is commonly available in industry-standard 56-lead TSOP (Thin Small Outline Package) or 64-ball Intel Easy BGA packages. These compact form factors are designed for high-density PCB mounting, catering to the space-constrained nature of modern electronic designs.
ICGOODFIND Summary
The Intel TE28F128J3C150 is a high-density NOR Flash memory solution that excels in performance, reliability, and flexibility. Its fast read speeds, advanced command interface, and robust hardware protections make it an enduring choice for developers of systems where dependable code execution and data storage are non-negotiable. It embodies Intel's legacy of creating foundational memory components that power innovation across countless electronic devices.
Keywords:
1. NOR Flash
2. 128-Megabit
3. Execute-in-Place (XIP)
4. Program/Erase Endurance
5. Hardware Write Protection
